STS

The STS Multiplex is a PECVD deposition system for 6-inch wafers, processing silicon nitride with gases including oxygen, carbon tetrafluoride, silane, nitrous oxide, and ammonia.

General referenceSTS ICP is an etch tool class used for plasma-based material removal and surface pattern transfer. It belongs to the category of inductively coupled plasma etch systems used in semiconductor and related microfabrication work.

The STS 320 is a parallel-plate reactive ion etching (RIE) tool for etching silicon, silicon nitride, and transition metals with volatile fluorides.

The STS M Plex Multiplex ICP Etcher is an inductively coupled plasma etcher specified for 3-inch wafers.

STS 320 PC is a fully automatic computer controlled reactive ion etching system with end point detection.

The STS Multiplex ASE ICP Deep Silicon Etcher is a low- and high-frequency ICP etch system for deep silicon trench etching of a single 6-inch substrate.

The STS Multiplex ICP ASE Advanced Silicon Etch (ASE) system is an etch tool configured for 150 mm wafers in the cited inventory records.

The STS 310 is a plasma-enhanced chemical-vapor-deposition system used in the source to deposit silicon dioxide and silicon nitride films.

The STS MXP Multiplex ICP is an inductively coupled plasma etcher.

The STS Multiplex ICP is a load-locked inductively coupled plasma etch system used for deep silicon etching using the Bosch process.

The STS Multiplex ICP Advanced Oxide Etcher (AOE) is a semi-auto carousel etcher for 6-inch to 8-inch wafers.

The STS MACS ICP HR is an etcher described as an 8-inch, 1-chamber system rated at 380V, 60Hz, 40A, 3-phase.