Ulvac
NE 950
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
What it is
How it works
General reference — not yet source-verifiedAn ICP-RIE etcher uses a plasma source to generate reactive species and a biased wafer stage to direct ion-assisted material removal.
Where it fits in the process flow
General reference — not yet source-verifiedThe Ulvac NE 950 sits in the etch segment of semiconductor manufacturing, where patterned material is removed after lithographic pattern transfer.
An ICP-RIE tool is used after pattern definition and before later cleaning, deposition, or metrology steps that follow etched feature formation.
Applications
General reference — not yet source-verifiedThe Ulvac NE 950 is used for plasma etching of semiconductor materials where directional material removal is needed.
What do the numbers mean?
Wafer handling2
Configuration & options5
Vintage & configurations
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
How is etch uniformity maintained across a wafer?General reference — not yet source-verified
Uniformity is controlled by the reactor design—such as gas distribution via a showerhead electrode, temperature control of the wafer chuck, and plasma confinement—as well as by adjusting RF power, pressure, and gas flow rates. Endpoint detection (e.g., optical emission spectroscopy) helps stop the etch at the correct layer.
What are common problems with dry etch systems?General reference — not yet source-verified
Challenges include microloading (etch rate variation with pattern density), notching (undercutting at feature corners), and plasma damage to sensitive devices. Particle contamination from reactor walls or residues can also occur. Regular maintenance and chamber conditioning help mitigate these issues.
Can the system etch multiple film types in a single process?General reference — not yet source-verified
Some dry etch processes can be designed as multi-step recipes with different gas chemistries and power levels, enabling sequential etching of different layers (e.g., oxide on nitride on silicon) without breaking vacuum, provided the reactor is optimized for such sequences.
What is the typical pressure range for reactive ion etching?General reference — not yet source-verified
RIE operates at low pressures, typically in the millitorr range. Lower pressures favor ion bombardment and anisotropic etching, while higher pressures increase chemical reaction rates and can lead to more isotropic profiles. The exact range depends on the specific reactor and process requirements.
Not publicly documented
The following facts about the NE 950 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the NE 950 are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the NE 950 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the NE 950 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the NE 950 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the NE 950 are on record.
Answerable by: an OEM parts catalog or a service engineer
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]Equipment inventory listing
- [2]waferpedia.com — waferpedia.comwaferpedia.com
- [3]waferpedia.com — waferpedia.comwaferpedia.com
Last updated Oct 7, 2026.
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