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Tokyo Electron

TE 8500 SATC

EtchTokyo Electron TE 8500 SATC family
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Provisional entry — research in progress

This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

TE 8500 SATC — Inventory photo
Fig. 01TE 8500 SATCInventory photo[1]

What it is

The Tokyo Electron TE 8500 SATC is an etch system used in semiconductor manufacturing.[1][2][3]

How it works

General reference — not yet source-verified

The Tokyo Electron TE 8500 SATC is an etch tool designed to remove material from the surface of a semiconductor wafer in a controlled manner.

As a plasma etch system, the TE 8500 SATC uses a plasma of reactive gases to etch the wafer, with the process chamber being a key component.

Where it fits in the process flow

General reference — not yet source-verified

The Tokyo Electron TE 8500 SATC is used in the fabrication of integrated circuits, typically after deposition or lithography steps.

The TE 8500 SATC processes wafers through a series of etch steps that define patterns transferred from a photoresist mask.

Applications

General reference — not yet source-verified

The Tokyo Electron TE 8500 SATC is used for etching dielectric and metal layers in semiconductor devices.

What do the numbers mean?

Configuration & options4

OEM
Tokyo Electron[1]
Accurate?
Model
TE 8500 SATC[1]
Accurate?
Type
Etcher[1]
Accurate?
Vintage
1997[1]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
TE 8500 (S)ATC———Equipment inventory listing[2]
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Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

How does this class of machine achieve anisotropic etch profiles?General reference — not yet source-verified

By combining physical ion bombardment (from the plasma) with chemical reactions, and controlling parameters like pressure, gas chemistry, and RF power to create directional etching with minimal lateral removal.

Is this class suitable for high-aspect-ratio etching?General reference — not yet source-verified

Yes, plasma etch systems are designed for high-aspect-ratio features, enabling the formation of deep trenches and dense patterns with vertical sidewalls.

Not publicly documented

The following facts about the TE 8500 SATC are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the TE 8500 SATC are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the TE 8500 SATC are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the TE 8500 SATC are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the TE 8500 SATC is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the TE 8500 SATC are on record.

    Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]Equipment inventory listing
  3. [3]Equipment inventory listing
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Last updated Oct 8, 2026.

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