Waferpedia

Applied Materials

Centura Enabler Oxide

EtchApplied Materials Centura family
Research Quality: 30% complete

Provisional entry — research in progress

This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

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What it is

The Applied Materials Centura Enabler is an oxide etching system for semiconductor manufacturing. The system is manufactured by Applied Materials and is designated under the Centura Enabler model name.[3][1][4][5][6]

Applications

General reference — not yet source-verified

The Applied Materials Centura Enabler is designed for etching oxide layers such as silicon dioxide or aluminum oxide. Applications include removing oxide from wafer surfaces, patterning oxide layers, and preparing surfaces for subsequent processing.

What do the numbers mean?

Configuration & options6

Server OS Type[1]
Accurate?
3 chamber[2]
Accurate?
OEM
Applied Materials[3]
Accurate?
Model
Centura Enabler[3]
Accurate?
Equipment type
Oxide Etcher[3]
Accurate?
Server OS Type
2008 Vintage[1]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
Centura Enabler (2008 Vintage)—2008Listed as 2008 vintageEquipment inventory listing[4]
Centura Enabler (Server OS Type 2008 Vintage)—2008Includes Server OS TypeEquipment inventory listing[1]
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Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What is the general operating principle of this class of etch tool?General reference — not yet source-verified

The tool uses a plasma-enhanced, reactive ion etch process. A plasma is struck in a low-pressure gas mixture, and the applied RF bias directs ions to the wafer, enabling anisotropic (directional) etching of the dielectric film without significant undercut or damage to the underlying layer.

What are the key process control parameters for such a system?General reference — not yet source-verified

Key parameters include chamber pressure, gas flow rates and ratios, RF power (both source and bias), wafer temperature, and electrode spacing. Controlling these parameters is essential for achieving uniform etch rates, good selectivity, and the desired feature profile across the wafer.

How does this class of tool ensure process repeatability?General reference — not yet source-verified

Repeatability is maintained through automated wafer handling in a vacuum environment, which minimizes exposure to ambient moisture and contaminants. Additionally, the system uses precise mass flow controllers, pressure regulators, and temperature control, along with chamber seasoning and cleaning routines, to maintain consistent chamber conditions over time.

Not publicly documented

The following facts about the Centura Enabler Oxide are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Centura Enabler Oxide are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the Centura Enabler Oxide are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the Centura Enabler Oxide are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the Centura Enabler Oxide is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the Centura Enabler Oxide are on record.

    Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (7)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]Equipment inventory listing
  4. [4]Equipment inventory listing
  5. [5]Equipment inventory listing
  6. [6]Equipment inventory listing
  7. [7]Equipment inventory listing
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Last updated Sep 27, 2026.

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