Comparison ledger
STS Multiplex, STS Multiplex ASE ICP Deep Silicon, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | MultiplexSTS | |
|---|---|---|
| OEM | STS | STS |
| Category | Deposition | Etch |
| Wafer size | — | Manual wafer lock |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | STS Multiplex | STS Multiplex |
| Specifications | ||
| Configuration | Decomposition Capability:[1] | Low and high frequency ICP (Inductively Coupled Plasma) etch system.[3] |
| Category | Deposition[1] | — |
| Wafer size | 6 inch[1] | Manual wafer lock[3] |
| Film deposited | Silicon Nitride (Si3N4)[1] | — |
| Processing gases | Oxygen, Carbon Tetrafluoride (CF4), Silane, Nitrous Oxide, Ammonia[1] | — |
| Tool type | PE CVD[2] | — |
| Deposition type | Plasma-enhanced chemical vapor deposition (PECVD)[1] | — |
| Deposited films | Thin films such as oxide, nitride, and silicon[2] | — |
| Process gases | Oxygen, carbon tetrafluoride (CF4), silane, nitrous oxide, ammonia[1] | — |
| Batch mode | Single or dual-wafer batch mode, no cassette operation[2] | — |
| Decomposition capability | Silicon dioxide (SiO2); silicon nitride (Si3N4)[1] | — |
| OEM | — | STS[3] |
| Model | — | Multiplex ASE[3] |
| Equipment type | — | Deep Silicon Etcher (Inductively Coupled Plasma)[3] |
| Wafer sizes | — | 6 inch[3] |
| Wafer lock | — | Manual wafer lock[3] |
| Plasma frequency | — | Low and high frequency ICP (Inductively Coupled Plasma)[3] |
| Process description | — | ASE (Advanced Silicon Etch) process consists of alternating cycles of etching and protective polymer deposition[3] |
| Application | — | Deep Si trench etching of a single 6" [150mm] substrate[3] |
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