Comparison ledger
Esec Datacon 2200 evo advanced, Esec Datacon 2200 evo hS, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ||
|---|---|---|
| OEM | Esec | Esec |
| Category | Packaging & Bonding | Packaging & Bonding |
| Wafer size | 4" | 4" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | 3rd generation | 3rd generation |
| Family | Esec Datacon 2200 evo advanced | Esec Datacon 2200 evo hS |
| Cited variants | — | |
| Specifications | ||
| Bonding method | Epoxy[1] | Epoxy[1] |
| Cycle time | 120 ms with Liquid Cooling option[1] | 120 ms with Liquid Cooling option[1] |
| Bonding accuracy | 20 µm @ 3σ (15 µm option)[1] | 20 µm @ 3σ (15 µm option)[1] |
| Wafer size | 4" to 12" (on 8" or 12" wafer frames)[1] | 4" to 12" (on 8" or 12" wafer frames)[1] |
| Die size | 0.25 mm (with Small Die Kit) to 20 mm[1] | 0.25 mm (with Small Die Kit) to 20 mm[1] |
| Leadframe size | Length: 90 to 300 mm; Width: 23 to 100 mm[1] | Length: 90 to 300 mm; Width: 23 to 100 mm[1] |
| Machine dimensions | 1785 x 1448 x 1400 mm (W x D x H)[1] | 1785 x 1448 x 1400 mm (W x D x H)[1] |
| Machine type | — | Die Bonder[1] |
| Generation | — | 3rd generation[1] |
| Platform | — | 300 mm high speed platform[1] |
| X/Y placement accuracy | — | ± 7 µm @ 3 sigma[2] |
| Theta placement accuracy | — | ± 0.10° @ 3 sigma[2] |
| Bond force | — | 0.5 N to 75 N programmable[2] |
| Die attach speed | — | up to 12,000 UPH/module[2] |
| Bond head rotation | — | 0° - 360° rotation[2] |
| Heated bond head | — | up to 450°C (optional)[2] |
| Machine dimensions (LxDxH) | — | 1,160 mm x 1,225 mm x 1,750 mm[2] |
| Weight | — | 1,300 kg[2] |
| Uptime | — | > 98 %[2] |
| Yield | — | > 99.95 %[2] |
| Die thickness | — | 0.05 - 2 mm[2] |
| Frame size | — | FF070, FF105, FF108, FF123; automatic change (others on request)[2] |
| Chip tray formats | — | Waffle pack / Gel-Pak® 2" x 2" and 4" x 4"; JEDEC tray on request[2] |
| Substrate working range | — | 13" x 8" (325 mm x 200 mm)[2] |
| Net weight | — | 1300 kg[3] |
| Overall dimensions | — | 1160 x 1225 x 1750 mm[3] |
| Standard bond head rotation | — | 0 Degree to 360 Degree[3] |
| Wafer die attach size | — | 0.18 to 5 mm[3] |
| Wafer die thickness | — | 0.05 to 2 mm[3] |
| X Y placement accuracy | — | ± 7 µm[3] |
| Placement speed | — | Up to 12000 UPH[3] |
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