Waferpedia

Comparison ledger

2009 fS EversusDatacon 2200 evo

Esec 2009 fS E, Esec Datacon 2200 evo, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMEsecEsec
CategoryPackaging & BondingPackaging & Bonding
Wafer size4"4"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation3rd generation3rd generation
FamilyEsec 2009 fS EEsec Datacon 2200 evo
Cited variants—
  • Datacon 2200 evo plus[1]
  • Datacon 2200 evo hF[1]
  • Datacon 2200 evo hS[1]
  • Datacon 2200 evo advanced[1]
Specifications
Machine typeDie bonder[1]Die Bonder[1]
Platform description3rd generation of the most flexible 300 mm high speed platform[1]most flexible 300 mm high speed platform[1]
Bonding methodEpoxy[1]Epoxy[1]
Cycle time120 ms with Liquid Cooling option[1]120 ms with Liquid Cooling option[1]
Bonding accuracy20 µm @ 3σ (15 µm option)[1]20 µm @ 3σ (15 µm option)[1]
Wafer size4" to 12" (on 8" or 12" wafer frames)[1]4" to 12" (on 8" or 12" wafer frames)[1]
Die size0.25 mm (with Small Die Kit) to 20 mm[1]0.25 mm (with Small Die Kit) to 20 mm[1]
Leadframe sizeLength: 90 to 300 mm; Width: 23 to 100 mm[1]Length: 90 to 300 mm; Width: 23 to 100 mm[1]
Machine dimensions1785 x 1448 x 1400 mm (W x D x H)[1]1785 x 1448 x 1400 mm (W x D x H)[1]
Generation—3rd generation[1]

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Sources (1)Every fact above is drawn from these public sources
  1. [1]besi.combesi.com