Comparison ledger
Applied Materials 0010 47763, Tegal 901ACS, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | 901ACSTegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 75 mm, 100 mm, 125 mm, and 150 mm diameter wafers; 4-inch square wafers |
| Process node | — | 1 micron |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Tegal 901ACS |
| Cited variants | — | |
| Specifications | ||
| Configuration | 2nd Source New[2] | — |
| Type | Monopolar Dual Heated[3] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[4] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Model | 0010-47763[2] | — |
| OEM | Applied Materials[2] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[3] | — |
| Quantity available (source) | 1[3] | — |
| System type | — | Wide-gap diode reactor system[1] |
| Process type | — | Low-temperature plasma etch operations[1] |
| Wafer diameters | — | 75 mm, 100 mm, 125 mm, and 150 mm diameter wafers[1] |
| Square wafer size | — | 4-inch square wafers[1] |
| Minimum feature size | — | 1 micron[1] |
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