Waferpedia

Tegal

901ACS

The Tegal 901ACS is a wide-gap diode reactor system. The Tegal 901ACS is suited for low-temperature plasma etch operations. The Tegal 901ACS can etch features down to 1 micron.[1]

Tegal901ACS
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Wafer size

75 mm, 100 mm, 125 mm, and 150 mm diameter wafers; 4-inch square wafers

Node / era

1 micron

What it is

The Tegal 901ACS is a reactive ion etching system for semiconductor processing.[1]

The Tegal 901ACS is a wide-gap diode reactor system.[1]

How it works

The Tegal 901ACS is suited for low-temperature plasma etch operations and is geared toward etching delicate materials without clamps or electrostatic wafer-movement mechanisms.[1]

The Tegal 901ACS handles wafers cassette to cassette, and the electrodes are temperature controlled.[1]

Where it fits in the process flow

The Tegal 901ACS is used for non-critical etching operations and for photoresist trimming.[1]

Applications

The Tegal 901ACS is suited for semiconductor processing of silicon, gallium-arsenide, indium-phosphide, and silicon-germanium substrates.[1]

The Tegal 901ACS can plasma etch silicon dioxide, silicon nitride, and silicon carbide.[1]

  • Semiconductor processing of silicon
  • Semiconductor processing of gallium-arsenide (Ga-As)
  • Semiconductor processing of indium-phosphide (In-P)
  • Semiconductor processing of silicon-germanium (Si-Ge) substrates
  • Plasma etching of silicon dioxide
  • Plasma etching of silicon nitride
  • Plasma etching of silicon carbide
  • Etching delicate materials such as organics and easily-damaged coatings and devices

What do the numbers mean?

Wafer handling2

Wafer diameters
75 mm, 100 mm, 125 mm, and 150 mm diameter wafers[1]
Accurate?
Square wafer size
4-inch square wafers[1]
Accurate?

Configuration & options3

System type
Wide-gap diode reactor system[1]
Accurate?
Process type
Low-temperature plasma etch operations[1]
Accurate?
Minimum feature size
1 micron[1]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
Tegal 903ACS——Narrow gap diode reactor system; ideal for tightly-controlled, anisotropic etching of silicon dioxide and silicon nitride insulating layers.plasmatherm.com[1]
Tegal 981ACS——Scaled-up version of the 901ACS; built to handle 150 mm and 200 mm diameter wafers, 100 mm square wafers, and 6-inch square wafers.plasmatherm.com[1]
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What replaced it?

  • siblingTegal 981ACS— The 981ACS is a scaled-up version of the 901ACS, sharing features such as small footprint, touchscreen interface, and low maintenance parts.source[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Not publicly documented

The following facts about the 901ACS are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 901ACS are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the 901ACS are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 901ACS are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • No publicly documented compatible parts, consumables, or accessories for the 901ACS are on record.

    Answerable by: an OEM parts catalog or a service engineer

  • No publicly hosted manuals, SOPs, or datasheets for the 901ACS are on record.

    Answerable by: university cleanroom staff or an OEM application specialist

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Sources & citations

Sources (1)Every fact above is drawn from these public sources
  1. [1]plasmatherm.com — plasmatherm.complasmatherm.com
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Last updated Oct 3, 2026.

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