Comparison ledger
ABM -407B-2-S-CE-S293 Robot, Hitachi CG5000, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | CG5000Hitachi | |
|---|---|---|
| OEM | ABM | Hitachi |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2014 Date of manufacture |
| Control system | — | — |
| Generation | — | — |
| Family | ABM -407B-2-S-CE-S293 Robot | Hitachi CG5000 |
| Specifications | ||
| Model | ABM-407B-2-S-CE-S293[1] | — |
| Description | ROBOT[1] | — |
| Refurbished RTP RTA | AG Associates 4100, 4108, 8108, 8800, 8800i,210, 310, 410, 610, 610I, MPT RTP-600S, 800S, RTP-3000[1] | — |
| KLA-Tencor Spare Parts and Service | RS-35C,RS-55,RS-75,RS-100,UV-1050,UV-1080,UV-1250,UV-1280,ASET F5 / F5X,AIT Systems,HRP-220 Stylus Profiler[1] | — |
| Refurbished Isotropic Plasma Etcher | Matrix, Tegal, Lam Research, Branson/IPC, PlasmaTherm[1] | — |
| Refurbished PECVD, ALD Equipment | Cambridge, Oxford PlasmaLab , Plasma-Therm, STS/SPTS, AMAT[1] | — |
| Refurbished Mask Aligner | Canon Neutronix PLA501/545, Suss MA200CC, MA8BA8 GEN3, MA8BA8 GEN2, MA8BA8, MA200E[1] | — |
| Refurbished Bonding | SUSS SB6E, SUSS SB8E, EVG 620 BA, EVG EV501, West Bond 7200AR 7400A[1] | — |
| Refurbished Wafer Prober | Electroglas EG 4090u+, EG 4090, EG 2001X, EG 1034X, Cascade PS-21[1] | — |
| Date of Manufacture | — | 2014-05-01[2] |
| Currently Configured for | — | 300mm[2] |
| Tool current condition | — | Power on, not on production[2] |
| Process | — | Scanning Defect[2] |
| Software Version | — | 58.52[2] |
| System Power Rating | — | 208 AC 1 Phase[2] |
| Loading Configuration | — | 3 L/Ps[2] |
| Technology | — | CD-SEM[3] |
| Application | — | Applications for wafers[3] |
| Measurement characteristics | — | measurement, high-resolution, high-throughput[3] |
| Configured wafer size | — | 300mm[2] |
| Year(s) | — | 2014[2] |
| Year of Manufacture | — | 2014-05-01[2] |
| Wafer Size | — | 300mm[2] |
| Electron Beam Voltage (Postdevelop L/S CD) | — | 500 eV[4] |
| Electron Beam Voltage (Postetch LCDU) | — | 800 eV[4] |
| Technology Node | — | sub-22nm[3] |
| Measurement Type | — | CD-SEM[2] |
| Measurement type | — | critical-dimension (CD) measurement[2] |
| Performance | — | high-resolution, high-throughput, high-repeatability[3] |
| Calibration | — | enhanced automatic calibration[3] |