Comparison ledger
STS Multiplex ASE ICP Deep Silicon, Tegal 1512e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1512eTegal | |
|---|---|---|
| OEM | STS | Tegal |
| Category | Etch | Etch |
| Wafer size | Manual wafer lock | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | STS Multiplex | Tegal 1512e |
| Specifications | ||
| Wafer size | Manual wafer lock[1] | — |
| Configuration | Low and high frequency ICP (Inductively Coupled Plasma) etch system.[1] | — |
| OEM | STS[1] | — |
| Model | Multiplex ASE[1] | — |
| Equipment type | Deep Silicon Etcher (Inductively Coupled Plasma)[1] | — |
| Wafer sizes | 6 inch[1] | — |
| Wafer lock | Manual wafer lock[1] | — |
| Plasma frequency | Low and high frequency ICP (Inductively Coupled Plasma)[1] | — |
| Process description | ASE (Advanced Silicon Etch) process consists of alternating cycles of etching and protective polymer deposition[1] | — |
| Application | Deep Si trench etching of a single 6" [150mm] substrate[1] | — |
| Tool type | — | Industrial RIE plasma etcher system[2] |
| Stated configuration | — | With modules assembly for CI-4222[2] |
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