Comparison ledger
ASML 5500 350 C, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 5500 350 CASML | 1505 G 6 ENikon |
|---|---|---|
| OEM | ASML | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML 5500 350 C | Nikon 1505 |
| Cited variants |
| — |
| Specifications | ||
| Configuration | With:[2] | 5" reticle[3] |
| Laser source | Cymer ELS 5600 excimer laser[2] | — |
| Wafer size (configured) | 100 mm (4 inch)[1] | — |
| Vintage year | 1997[2] | — |
| Cluster configuration | In-line with TEL Clean Track ACT-8 coater/developer[1] | — |
| Model | 5500 / 350 C[2] | 1505 G 6 E[3] |
| Equipment type | Stepper[2] | — |
| Cluster pairing | In-line with the ASML PAS5500/350C stepper to form a DUV lithography cluster[1] | — |
| Configured wafer size | 100 mm (4") wafers[1] | — |
| Alternate designation | ASML PAS 5500/350C[1] | — |
| Resolution | — | 650 nm[4] |
| Numerical Aperture | — | 0.54[4] |
| Reduction | — | 5x[4] |
| Exposure Field | — | 15 x 15 mm[4] |
| Alignment Accuracy | — | 130 nm[4] |
| Wafer Size | — | 4 inch[3] |
| Light Source | — | g-line[5] |
| Introduction Year | — | 1988[4] |
| NA (Numerical Aperture) | — | 0.54[4] |
| Make | — | Nikon[3] |
| Category | — | Stepper[3] |
| Wafer Sizes | — | 4 inch[3] |
| Exposure type | — | g-line[4] |
| NA | — | 0.54[4] |
| Exposure field | — | 9.3 x 18.8 mm[4] |
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