Comparison ledger
Applied Materials 0010-13622 RF Match for, CHA SSC-1000, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | SSC-1000CHA |
|---|---|---|
| OEM | Applied Materials | CHA |
| Category | Deposition | Deposition |
| Wafer size | — | 10 in. |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | CHA SSC-1000 |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | Multi-station system[2] |
| Model | 0010-13622[1] | — |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| System type | — | Sputtering System[2] |
| Wafer size | — | 10 in.[2] |
| Cathodes | — | Up to four RF or DC cathodes[2] |
| Operation | — | Sputter up or sputter down operation[2] |
| Fixture | — | Single-plane, multi-substrate rotating fixture[3] |
| Shutter | — | Rotating shutter for pre-deposition and positive thickness cutoff control[3] |
| Automation | — | Computer automation[3] |
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