Tokyo Electron
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Plasma etching uses a gas mixture that is ionized into a plasma by an RF field. Reactive species in the plasma chemically react with the wafer surface to form volatile byproducts that are pumped away. The process can be anisotropic, producing vertical sidewalls.
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The following facts about the Unity II E 655 PP are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
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Last updated Sep 27, 2026.
The Applied Materials 0010-47763 is an electrostatic chuck (ESC) assembly used in semiconductor etching processes.
The Applied Materials 0010-16392 is an electrostatic chuck assembly designed for 300 mm wafer processing, featuring a dual electrode configuration.
Oxford Instruments 100 ICP Fluorine is an inductively coupled plasma etcher for fluorine-based etching, supporting cryo DRIE and multiple etch gases including SF6 and C4F8.