SUSS MicroTec
The SUSS MJB 3 Mask Aligner is a mask alignment system for 3-inch wafers. The SUSS MJB 3 uses a 350W Hg lamp and UV400 near UV optics to achieve 0.6 µm resolution. The SUSS MJB 3 includes a splitfield microscope with Leica objectives.[1]

Mask alignment and exposure occur in the lithography stage of semiconductor processing, after a substrate has been prepared for pattern transfer.
A mask aligner supports the patterning step that follows coating and alignment and precedes development and later fabrication steps.
A mask aligner is used for pattern transfer in photolithographic fabrication of microstructures on light-sensitive substrates.
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A splitfield microscope with Leica objectives of 3.5x, 10x, and 20x magnification.[1]
A 350-watt lamphouse with an Ushio USH-350DS mercury lamp.[1]
350 to 450 nanometers (UV400 near UV optics).[1]
The following facts about the MJB 3 Mask are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the MJB 3 Mask are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the MJB 3 Mask are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the MJB 3 Mask are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the MJB 3 Mask are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the MJB 3 Mask is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 8, 2026.
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The EVG 101 is an advanced resist processing system for spin or spray coating and developing of wafers up to 300 mm.