Waferpedia

Raith

EBPG5000

Lithography150mmsub-10 nmRaith EBPG5000 family
Research Quality: 70% complete

The Raith EBPG5000 is an e-beam lithography tool that writes features smaller than 10 nm and places structures on a substrate with an accuracy of less than 20 nm. The Raith EBPG5000 (EBPG5000ES) uses a 100 keV thermal field emission gun, a Gaussian beam, and a 50 MHz pattern generator. The Raith EBPG5200 (EBPG5000 Plus) variant provides a 155 mm writing capability, supports wafers and masks up to 6 inches, and runs its thermal field emission gun at 20, 50, and 100 kV.[1][2]

EBPG5000 — epfl.ch
Fig. 01EBPG5000epfl.ch[1]
  • Plate 01Finishing the E-Beam Process on a Raith EBPG 5000+ (Live Streamed)

    OnripresenceWatch on YouTube

Wafer size

150mm

Node / era

sub-10 nm

Power

50 MHz[1]

Optics

smaller than 10 nm features[1]

Preceded by
EBPG5150
This tool
EBPG5000
Succeeded by
Latest generation
All related

How it works

The EBPG5000 operates with a 100 keV thermal field emission gun and a Gaussian beam. The system uses a 50 MHz pattern generator for writing the pattern into the resist. Direct write mark detection and alignment software overlay the pattern onto pre-existing marks on the substrate. The system accepts holders for 50 mm, 100 mm, and 150 mm wafers, as well as for 5-inch masks and smaller piece parts. The writing strategy involves scanning the Gaussian beam across the substrate in a vector fashion, controlled by the pattern generator.[1]

What can it run?

Process applications and technology nodes documented for this tool.

  • Write lithography
  • R&D mask making
  • Compound semiconductor application
  • Vertical resonant tunnel transistor
  • Circular grating resonator

What do the numbers mean?

Power & electrical12

Pattern generator
50 MHz[1]
Accurate?
Pattern generator
50 / 100 MHz[2]
Accurate?
Acceleration voltage
100 keV[1]
Accurate?
Pattern generator frequency
50 MHz[1]
Accurate?
Pattern generator frequency (EPFL EBPG5000ES)
50 MHz[1]
Accurate?
Operating voltages (UChicago model)
20, 50, and 100 kV[2]
Accurate?
Pattern generator frequency (UChicago model)
50 / 100 MHz[2]
Accurate?
Pattern generator (EPFL EBPG5000ES)
50 MHz[1]
Accurate?
Acceleration voltages (PNF EBPG5200)
20, 50, and 100 kV[2]
Accurate?
Pattern generator (PNF EBPG5200)
50 / 100 MHz[2]
Accurate?
Pattern generator
50 MHz pattern generator[1]
Accurate?
Pattern generator
50 / 100 MHz pattern generator[2]
Accurate?

Wafer handling9

Wafer holders
50 mm, 100 mm, and 150 mm wafers[1]
Accurate?
Maximum wafer size
up to 6 inches[2]
Accurate?
Wafer sizes supported
50 mm, 100 mm, 150 mm[1]
Accurate?
Substrate support (EPFL EBPG5000ES)
holders for 50 mm, 100 mm, 150 mm wafers, 5‑inch masks and smaller piece parts[1]
Accurate?
Wafer size (UChicago model)
up to 6″ wafers[2]
Accurate?
Substrate holders (EPFL EBPG5000ES)
50 mm, 100 mm, 150 mm wafers; 5-inch masks; smaller piece parts[1]
Accurate?
Substrate sizes (PNF EBPG5200)
wafers up to 6 in; masks up to 6 in[2]
Accurate?
Holders
holders for 50 mm, 100 mm, and 150 mm wafers; 5 inch masks and smaller piece parts[1]
Accurate?
Wafer size
up to 6 inch wafers[2]
Accurate?

Optics & imaging15

Feature capability
smaller than 10 nm features[1]
Accurate?
Placement accuracy
less than 20 nm[1]
Accurate?
Mask holders
5 inch masks and smaller piece parts[1]
Accurate?
Maximum mask size
up to 6 inches[2]
Accurate?
Minimum feature size
less than 8 nm[2]
Accurate?
Minimum feature size
<10 nm[1]
Accurate?
Overlay accuracy
<20 nm[1]
Accurate?
Mask size supported
5 inch[1]
Accurate?
Minimum feature size (EPFL EBPG5000ES)
smaller than 10 nm[1]
Accurate?
Mask size (UChicago model)
up to 6″ masks[2]
Accurate?
Minimum feature size (UChicago model)
less than 8 nm[2]
Accurate?
Minimum feature (EPFL EBPG5000ES)
smaller than 10 nm[1]
Accurate?
Minimum feature (PNF EBPG5200)
less than 8 nm[2]
Accurate?
Feature size
smaller than 10 nm features[1]
Accurate?
Mask size
up to 6 inch masks[2]
Accurate?

Performance2

Alignment
direct write mark detection and alignment software[1]
Accurate?
Alignment
direct write mark detection & alignment software[1]
Accurate?

Control & software1

Temperature control
21°C ± 0.1°C[1]
Accurate?

Configuration & options22

Tool type
Ebeam lithography tool/system[1]
Accurate?
Electron gun
100 keV thermal field emission gun[1]
Accurate?
Beam type
Gaussian beam[1]
Accurate?
Writing capability
155 mm[2]
Accurate?
Electron gun
thermal field emission gun, for operation at 20, 50, and 100 kV[2]
Accurate?
Field size
variable field size to 1 mm at all kVs[2]
Accurate?
Gun type
thermal field emission[1]
Accurate?
Beam type
Gaussian[1]
Accurate?
Electron source type
Thermal Field Emission gun (TFE)[1]
Accurate?
Beam energy (EPFL EBPG5000ES)
100 keV[1]
Accurate?
Operating temperatures
21 °C ± 0.1 °C (cleanroom environment)[1]
Accurate?
Model identifier (UChicago)
Raith EBPG5200 E-Beam lithography system (also called EBPG5000 Plus)[2]
Accurate?
Field size
variable to 1 mm at all kVs[2]
Accurate?
Electron source (EPFL EBPG5000ES)
100 keV thermal field emission gun[1]
Accurate?
Cleanroom environment
custom cleanroom maintained at 21°C ± 0.1°C[1]
Accurate?
Writing capability (PNF EBPG5200)
155 mm[2]
Accurate?
Field size (PNF EBPG5200)
variable field size to 1 mm at all kVs[2]
Accurate?
Electron source (PNF EBPG5200)
Thermal Field Emission gun[2]
Accurate?
Gun
100 keV thermal field emission gun[1]
Accurate?
Beam
Gaussian beam[1]
Accurate?
Writing capability
155 mm writing capability[2]
Accurate?
Gun
Thermal Field Emission gun, for operation at 20, 50, and 100 kV[2]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
EBPG5000ES——The EBPG5000ES is a version of the EBPG5000 equipped with a 100 keV thermal field emission gun, Gaussian beam, and 50 MHz pattern generator.epfl.ch[1]
EBPG5200 (also known as EBPG5000 Plus)——The EBPG5200 is the latest model in the EBPG series, featuring 155 mm writing capability, support for wafers and masks up to 6″, minimum feature size below 8 nm, 20–100 kV operating voltage, and 50/100 MHz pattern generator.pnf.uchicago.edu[2]
EBPG5200 (EBPG5000 Plus)——Configuration used at UChicago Pritzker Nanofab; 155 mm writing capability, wafers/masks up to 6 in, 20/50/100 kV thermal field emission gun, 50/100 MHz pattern generator, variable field size to 1 mm.pnf.uchicago.edu[2]
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What replaced it?

  • predecessorRaith EBPG5150— The EBPG5200 is the latest model in the EBPG series, preceded by the EBPG5150.source[2]

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Pattern generator50 MHz[1]
  • Pattern generator50 / 100 MHz[2]
  • Acceleration voltage100 keV[1]
  • Pattern generator frequency50 MHz[1]
  • Pattern generator frequency (EPFL EBPG5000ES)50 MHz[1]
  • Operating voltages (UChicago model)20, 50, and 100 kV[2]
  • Pattern generator frequency (UChicago model)50 / 100 MHz[2]
  • Pattern generator (EPFL EBPG5000ES)50 MHz[1]
  • Acceleration voltages (PNF EBPG5200)20, 50, and 100 kV[2]
  • Pattern generator (PNF EBPG5200)50 / 100 MHz[2]
  • Pattern generator50 MHz pattern generator[1]
  • Pattern generator50 / 100 MHz pattern generator[2]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What is the minimum feature size the EBPG5000 can write?

The EBPG5000ES model can write features smaller than 10 nanometers. A comparable model, the EBPG5200, can write minimum features of less than 8 nanometers.[1][2]

What wafer sizes can the EBPG5000 handle?

The EBPG5000ES accepts holders for 50 mm, 100 mm, and 150 mm wafers, as well as 5-inch masks and smaller piece parts. A similar system, the EBPG5200, accommodates wafer sizes up to 6 inches and mask sizes up to 6 inches.[1][2]

What is the pattern generator frequency?

The EBPG5000ES has a 50 MHz pattern generator. A similar system, the EBPG5200, can operate with a 50 or 100 MHz pattern generator.[1][2]

What is the alignment accuracy of the EBPG5000?

The EBPG5000ES can place structures on a substrate with an accuracy of less than 20 nanometers.[1]

Not publicly documented

The following facts about the EBPG5000 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the EBPG5000 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the EBPG5000 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the EBPG5000 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • No publicly documented compatible parts, consumables, or accessories for the EBPG5000 are on record.

    Answerable by: an OEM parts catalog or a service engineer

  • No publicly hosted manuals, SOPs, or datasheets for the EBPG5000 are on record.

    Answerable by: university cleanroom staff or an OEM application specialist

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]epfl.ch — epfl.chepfl.ch
  2. [2]pnf.uchicago.edu — pnf.uchicago.edupnf.uchicago.edu
  3. [3]Toronto Nanofabrication Centre (TNFC) - Electrical & Computer Engineering — ece.utoronto.caece.utoronto.ca
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Last updated Oct 8, 2026.

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