Waferpedia

Canon

FPA 3000 iW

LithographyCanon FPA 3000 family
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The Canon FPA 3000 iW is a lithography stepper. The Canon FPA 3000 iW uses i-line exposure at 365 nm. The Canon FPA 3000 iW supports wafers from 4" through 8" SEMI Standard, JEIDA, Notch / Flat.[1]

FPA 3000 iW — Inventory photo
Fig. 01FPA 3000 iWInventory photo[2]

Power

200V[6]

Vacuum

2.0KW Super High Pressure Hg Lamp[1]

Performance

< 1.5%[1]

Optics

6" square t=0.25"[1]

What it is

The Canon FPA 3000 iW is a lithography stepper.[2][6]

The Canon FPA 3000 iW uses 200V power at 50/60 Hz with a three-phase supply and 29 kVA power.[2][6]

How it works

General reference — not yet source-verified

A lithography aligner or stepper exposes photosensitive material through a patterned mask while aligning the workpiece to existing features.

A lithography aligner transfers the mask pattern onto the coated substrate so later process steps can define smaller structures with controlled registration.

Where it fits in the process flow

General reference — not yet source-verified

A lithography aligner sits in the patterning flow of semiconductor fabrication after a substrate has been prepared with photosensitive coating and before the exposed image is developed and transferred into underlying layers.

The Canon FPA 3000 iW supports repeated pattern-definition steps during device fabrication.

Applications

The Canon FPA 3000 iW is used for photolithographic patterning in semiconductor manufacturing.[7]

The Canon FPA 3000 iW Fine Pattern is a lithography aligner used in semiconductor manufacturing.[7]

What do the numbers mean?

Power & electrical4

Voltage
200V[6]
Accurate?
50/60 Hz[2]
Accurate?
Phase
3 Phase[6]
Accurate?
Frequency
50/60 Hz[6]
Accurate?

Vacuum & pumping1

Light source
2.0KW Super High Pressure Hg Lamp[1]2 sources
Accurate?

Wafer handling5

Wafer size
4" thru 8" SEMI Standard, JEIDA, Notch / Flat[1]2 sources
Accurate?
Reticle rotation accuracy
<±0.02µm on wafer[1]2 sources
Accurate?
Reticle rotation repeatability
<0.05µm on wafer[1]2 sources
Accurate?
Wafer alignment
<0.10µm mean + 3sigma[1]2 sources
Accurate?
Throughput
>120 wafers/hour Φ6", 50mm, 9 shots; >115 wafers/hour Φ8", 50mm, 14 shots[1]2 sources
Accurate?

Optics & imaging6

Reticle size
6" square t=0.25"[1]2 sources
Accurate?
Reticle material
Quartz[1]2 sources
Accurate?
Projection magnification
1/2 X[1]2 sources
Accurate?
Numerical aperture
0.24[1]2 sources
Accurate?
Exposure light
i-line (365nm)[1]2 sources
Accurate?
Resolution
<0.8µm[1]2 sources
Accurate?

Performance4

Uniformity
< 1.5%[1]2 sources
Accurate?
Focus repeatability
<0.10µm (3sigma)[1]2 sources
Accurate?
Leveling repeatability
<7ppm (3sigma)[1]2 sources
Accurate?
Step accuracy
<0.05µm (3sigma)[1]2 sources
Accurate?

Dimensions & facilities1

Depth of focus
>4.0µm (0.8µm L&S)[1]2 sources
Accurate?

Configuration & options18

Power
29kVA[2]
Accurate?
Rasco TBW-CD-83iW Compact Chamber[2]
Accurate?
Make
Canon[2]
Accurate?
Model
FPA 3000 iW[2]
Accurate?
Category
Lithography[6]
Accurate?
Equipment type
Stepter[2]
Accurate?
Chamber
Rasco TBW-CD-83iW Compact Chamber[2]
Accurate?
Pattern material
2 layer Cr, 3 layer Cr[1]
Accurate?
Pellicle frame
Pattern side only[1]
Accurate?
Field size
50X50mm[1]2 sources
Accurate?
Intensity
2500 W/m 2[1]
Accurate?
Image field deviation
<2.5µm[1]
Accurate?
Distortion
<±0.11µm[1]
Accurate?
Minimum compensation range
>100ppm[1]
Accurate?
Scaling
<±1.0ppm[1]
Accurate?
Orthogonality
<±1.0ppm[1]
Accurate?
Equipment type
Stepper[6]
Accurate?
Rasco chamber
TBW-CD-83iW Compact Chamber[2]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
Canon FPA 3000 iW Fine Pattern———waferpedia.com[7]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Voltage200V[6]
  • Configuration50/60 Hz[2]
  • Phase3 Phase[6]
  • Frequency50/60 Hz[6]
  • Light source2.0KW Super High Pressure Hg Lamp[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What type of light source does a lithography system like the FPA 3000 iW use?General reference — not yet source-verified

Most lithography systems in this class use a mercury arc lamp or excimer laser as the light source. The wavelength is typically in the i-line (mid-ultraviolet) or deep ultraviolet range, depending on the specific model and generation.

How does the machine achieve alignment between layers?General reference — not yet source-verified

Alignment is performed using an off-axis or through-the-lens optical system that detects alignment marks on the wafer and the reticle. The stage moves to align each exposure field with high precision, using feedback from sensors to correct for positional errors.

What determines the smallest feature size a lithography system can print?General reference — not yet source-verified

The resolution is governed by the exposure wavelength and the numerical aperture of the projection lens, according to the Rayleigh criterion. Additionally, photoresist chemistry and process parameters such as focus and dose uniformity affect the achievable critical dimension.

How often does such a system require maintenance?General reference — not yet source-verified

Routine maintenance includes cleaning of optical elements, replacement of lamps or laser modules, and calibration of alignment and stage systems. Frequency depends on usage intensity, but typical preventive maintenance intervals are measured in months or after a certain number of wafer exposures.

Can the same lithography tool be used for all layers of a chip?General reference — not yet source-verified

Not necessarily. Different layers have different resolution and overlay requirements. For advanced processes, leading-edge layers may require a high-resolution scanner, while less critical layers can be exposed on a lower-resolution stepper. The choice depends on the specific device design and manufacturing strategy.

Not publicly documented

The following facts about the FPA 3000 iW are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the FPA 3000 iW are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the FPA 3000 iW are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the FPA 3000 iW are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the FPA 3000 iW is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the FPA 3000 iW are on record.

    Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (7)Every fact above is drawn from these public sources
  1. [1]servtechinc.com — servtechinc.comservtechinc.com
  2. [2]Inventory photo
  3. [3]Inventory photo
  4. [4]Inventory photo
  5. [5]Inventory photo
  6. [6]waferpedia.com — waferpedia.comwaferpedia.com
  7. [7]waferpedia.com — waferpedia.comwaferpedia.com
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Last updated Oct 10, 2026.

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