Aixtron
G 5 WW C SiC Epitaxy Reactor
The Aixtron G 5 WW C SiC Epitaxy Reactor is a deposition system. The Aixtron G 5 WW C SiC Epitaxy Reactor is a 6-inch wafer system. The Aixtron G 5 WW C SiC Epitaxy Reactor includes a wafer transfer module.[1][2]
What it is
The Aixtron G 5 WW C processes six-inch wafers. The system includes a reactor glove box, a gas mixing manifold, a Huber Minichiller 600, a wafer transfer module, a process control monitor, and a CT-BW-K1-HT waste gas abatement system. The reactor requires three-phase, four-wire-plus-ground electrical service at 208 volts alternating current and 120 volts alternating current at 60 hertz.[3][1][2]
How it works
General reference — not yet source-verifiedSilicon carbide epitaxy reactors heat substrates to high temperatures in a controlled atmosphere. Precursor gases are introduced over the heated surface, where they decompose and deposit a crystalline epitaxial layer. The process is performed under inert conditions to prevent contamination.
Where it fits in the process flow
General reference — not yet source-verifiedThe epitaxy reactor is used after substrate preparation and before device fabrication. The epitaxial layer grown on the substrate defines the electrical characteristics of the final devices.
What do the numbers mean?
Power & electrical4
Wafer handling2
Gas & chemistry4
Control & software2
- Process control monitor[3]
Configuration & options4
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What electrical service does the G5 WW C require?
The reactor requires three-phase, four-wire-plus-ground electrical service at 208 volts alternating current and 120 volts alternating current at 60 hertz.[3][1]
What waste gas abatement system is used?
The system uses a CT-BW-K1-HT waste gas abatement system.[3]
Not publicly documented
The following facts about the G 5 WW C SiC Epitaxy Reactor are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the G 5 WW C SiC Epitaxy Reactor are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the G 5 WW C SiC Epitaxy Reactor are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the G 5 WW C SiC Epitaxy Reactor are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the G 5 WW C SiC Epitaxy Reactor are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the G 5 WW C SiC Epitaxy Reactor is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]waferpedia.com — waferpedia.comwaferpedia.com
- [2]Aixtron G 5 WW C SiC Epitaxy Reactor family | Waferpedia — waferpedia.comwaferpedia.com
- [3]Inventory photo
Last updated Oct 11, 2026.
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