Comparison ledger
Oxford Instruments NGP80, Oxford Instruments Plasmalab 80 Plus, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NGP80Oxford Instruments | Plasmalab 80 PlusOxford Instruments |
|---|---|---|
| OEM | Oxford Instruments | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments NGP80 | Oxford Instruments Plasmalab 80 |
| Cited variants | — | |
| Specifications | ||
| Equipment name | Oxford NGP80 RIE[2] | — |
| Model | NGP80[3] | — |
| Configuration options | RIE, PECVD, RIE/PECVD[3] | — |
| Wafer size | up to 200 mm[3] | Up to 200mm[6] |
| Electrode diameter | 240 mm[1] | — |
| RF power | 300 W[4] | 600W[6] |
| Substrate temperature range (standard) | 5-80 °C[4] | — |
| Substrate temperature (max) | 400 °C[3] | — |
| Cryogenic temperature option | down to -150 °C[1] | — |
| Base pressure | ≤5×10⁻⁷ mbar[3] | — |
| Process pressure range | 10 mTorr to 10 Torr[3] | — |
| Gas species (RIE variant) | O2, CF4, SF6, Ar, CHF3, N2[4] | — |
| Chuck material | graphite[4] | — |
| Process Type | Reactive Ion Etch (RIE)[4] | — |
| Wafer Handling | pieces (unmounted), 100 mm, 150 mm[4] | — |
| Chuck Temperature Range | 5–80 °C[4] | — |
| Gas Species | O2, CF4, SF6, Ar, CHF3, N2[4] | — |
| Location | room W1-062[5] | — |
| Tool ID | — | DE-04[6] |
| Type | — | Reactive Ion Etching (RIE)[6] |
| Design | — | compact open-loading tool[6] |
| RF generator | — | 600W[6] |
| Wafer capacity | — | up to 200mm wafers[6] |
| Process gases | — | CF4, Ar, O2, SF6, CHF3[6] |
| Suitability | — | R&D or small-scale production[6] |
| Maximum wafer size | — | 200mm[6] |
| Tool type | — | Reactive Ion Etching (RIE)[6] |
| Loading type | — | Open load[6] |
| -Process | — | PECVD |
| -Voltage | — | 208 VAC, 3 Phase |
| -Equipment component | — | Main body |
| Description | — | Open load reactive ion etch system[7] |
| Wafer size designed for | — | 100 mm[7] |
| Wafer size maximum | — | 200 mm[7] |
| Platen size | — | 238 mm[7] |
| Power range | — | < 270 W[7] |
| Etch targets | — | Compound semiconductors and metals[7] |
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