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Comparison ledger

100 ICP FluorineversusSCCM Shin

Oxford Instruments 100 ICP Fluorine, Tokyo Electron SCCM Shin, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
SCCM ShinTokyo Electron
OEMOxford InstrumentsTokyo Electron
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineTokyo Electron SCCM Shin
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]—
OEM—Tokyo Electron[2]
Model—SCCM Shin[2]
Category—Etch[3]
Vintage—2005[2]
Description—Oxide etcher with qty 3 chambers[4]
Version—300 mm[4]
Tool type—TSP-30555SSS[4]
Load ports—3[4]
Etch process chambers—3[4]
RF generator (top)—Daihen AGA-50B 60 MHz 5 kW[4]
RF generator (bottom)—Daihen WGA-50E 2 MHz 5 kW[4]
Other chamber component—Daihen DGP-120A2[4]
Gate valves—Vat gate valves[4]
Vacuum pumps—Shimadzu turbo pumps[4]
DC power supplies—Kyosan DC power supplies[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]Equipment inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]fabsurplus.comfabsurplus.com