Comparison ledger
Oxford Instruments 100 ICP Fluorine, Tegal 903e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | 903eTegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 75 mm to 150 mm round substrates; rectangular substrates from 100 mm to 125 mm on a side |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2000 sale announced · 2001 order announced |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Tegal 903e |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| Tool type | — | diode plasma etch tool[2] |
| Substrate diameter range | — | 75 mm to 150 mm round silicon and gallium arsenide (GaAs) substrates[2] |
| Substrate format | — | rectangular substrates from 100 mm to 125 mm on a side[2] |
| Wafer/substrate capacity | — | 75 mm to 150 mm round substrates[2] |
| Rectangular substrate capacity | — | 100 mm to 125 mm on a side[2] |
| Configured form | — | "through the wall" configuration[4] |
| Application | — | etching oxide contacts[2] |
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