Comparison ledger
Laurell WS-650, Laurell WS-650-23, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | WS-650Laurell | WS-650-23Laurell |
|---|---|---|
| OEM | Laurell | Laurell |
| Category | Spin coater | Spin coater |
| Wafer size | 150mm | 150mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Laurell WS-650 | Laurell WS-650-23 |
| Cited variants | — | |
| Specifications | ||
| Equipment type | Cleanroom Instrumentation; Thin Film Fabrication[3] | — |
| Use | Should be used only for spincoating of photoresists[3] | — |
| Speed range | 100-12,000 RPM[3] | — |
| Substrate size | Up to 150 mm round substrates and 125 mm square substrates[3] | — |
| Substrate thickness | 0.1 to 1 mm[3] | — |
| Adapter | Wafer Fragment Adapter for 10–50 mm substrate fragments[3] | — |
| Location | FNT 4.106[3] | — |
| Installed location | Photolithography hood[3] | — |
| Model | Laurell WS-650[4] | WS-650-23 B Spin Coater[1] |
| Type | Spin coater[4] | — |
| Purpose | Coating photoresist on samples of various sizes[4] | — |
| Wafer size support | 50 mm through 150 mm substrates[4] | — |
| Controller speed range | 100-8000 rpm[4] | — |
| Speed resolution | 0.5 rpm[4] | — |
| Program capacity | Up to twenty 51-step programs[4] | — |
| Vacuum chuck | 1.75 inch natural propylene vacuum chuck[4] | — |
| Mounting | — | Station Mounted[1] |
| Wafer capacity | — | Up to ø 150 mm wafers[1] |
| Substrate capacity | — | 5" × 5" (127 mm × 127 mm) substrates[1] |
| Maximum rotational speed | — | 12,000 RPM (based on a ø 100 mm silicon wafer)[1] |
| Power | — | 95 to 240VAC, 47/63HZ, ~300 Watts[1] |
| Required N2 process/seal purge | — | 60–70 PSIG (4–5 bar) of Nitrogen/CDA[1] |
| Vacuum | — | 25–28 inches Hg; suggested flow volume 4.5 SCFM (0.127 cubic meters/minute) at 0 inches Hg[1] |
| Processes supported | — | Coating, Etching, Developing, Rinsing-Drying and Cleaning[1] |
| Maximum substrate size | — | 150 mm wafers, 5" × 5" (127 mm × 127 mm) substrates[1] |
| Vacuum requirement | — | 25–28 inches Hg (~635–711 mm Hg) with a flow volume of 4.5 SCFM (0.127 m³/min) at 0 inches Hg[1] |
| Seal/process purge gas | — | N₂ at 60–70 PSIG (4–5 bar)[1] |
| Gas consumption (standard motor) | — | 3 cubic feet per hour (0.085 m³/hour)[1] |
| Gas consumption (high-performance motor) | — | 20 cubic feet per hour (0.566 m³/hour)[1] |
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