Comparison ledger
Laurell SU-8, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | SU-8Laurell | 150 e MaskSUSS MicroTec |
|---|---|---|
| OEM | Laurell | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Laurell SU-8 | SUSS MicroTec 150 e Mask |
| Specifications | ||
| Equipment name | Spin Station- Laurell- SU-8 ONLY[1] | — |
| Category | Lithography[1] | — |
| Type | Spin station[1] | — |
| Photoresist Type | SU-8 (negative epoxy photoresist)[2] | — |
| Exposure Wavelength | i-line (365 nm)[2] | — |
| Maximum Absorption | Ultraviolet light at 365 nm[2] | — |
| Film Thickness Range (single spin coat) | 1 to >200 μm[3] | — |
| Maximum Film Thickness (multiple coats or dry film) | Up to above 300 μm (spun) or above 1 mm (dry film)[2] | — |
| Aspect Ratio (achieved) | >20 with solution formulation; >40 with dry resist[2] | — |
| Operational Mode | Dedicated to SU-8 only[1] | — |
| Spin Speed (recommended for reproducibility) | 3000 rpm[4] | — |
| Soft Bake Temperature (typical first step) | 65 °C[3] | — |
| Soft Bake Temperature (typical second step) | 95 °C[3] | — |
| Post Exposure Bake Temperature (first step) | 65 °C[3] | — |
| Post Exposure Bake Temperature (second step) | 95 °C[3] | — |
| Hard Bake Temperature (optional) | 150 °C[5] | — |
| Developer | 1-methoxy-2-propanol acetate (PGMEA) or SU-8 Developer[2] | — |
| Substrate Size (example used in research) | 150 mm (6-inch) silicon wafer[6] | — |
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