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Concept One 200versusConcept One 200 PECVD-TEOS

Lam Research Concept One 200, Lam Research Concept One 200 PECVD-TEOS, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
Concept One 200Lam Research
Concept One 200 PECVD-TEOSLam Research
OEMLam ResearchLam Research
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research Concept One 200Lam Research Concept One 200
Cited variants
  • Concept One 200 CVD[1]
  • Concept One 200 PECVD[2]
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Specifications
ConfigurationTEOS[2]208 Volts AC[4]
Wafer Size200 mm (8 inch)[3]—
Phase—3 Phase[4]
Make—Lam / Novellus[4]
Model—Concept One 200[4]
Process—PECVD-TEOS (Plasma-Enhanced Chemical Vapor Deposition - Tetraethyl Orthosilicate)[4]
Wafer Sizes—8 inch[5]
Process description—8" CCP/SiO, SiN[5]
Electrical—208 Volts AC, 3 Phase, 50/60 Hz[4]
Concept One 200 entryConcept One 200 PECVD-TEOS entryAsk about these tools →Share experience with this comparison →

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Sources (5)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]Equipment inventory listing
  3. [3]Equipment inventory listing
  4. [4]inventory listing
  5. [5]inventory listing