Comparison ledger
Axcelis 200 PCU, Axcelis GSD 200 E 2, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 PCUAxcelis | GSD 200 E 2Axcelis |
|---|---|---|
| OEM | Axcelis | Axcelis |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | 2000 Vintage | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Axcelis GSD 200 E 2 |
| Cited variants | — | |
| Specifications | ||
| P/N | SC 4840 A[3] | — |
| Frequency | 50 Hz[3] | 50 Hz[4] |
| Phase | 3 Phase[3] | 3 Phase[4] |
| Voltage | 400 V[3] | 208 V[4] |
| Type | — | High Current ion implanter[5] |
| Energy | — | 180 KeV[5] |
| Wafer Size | — | 8 inch (200 mm)[5] |
| Power Requirements | — | 208 V, 125 A, 50 Hz, 3 Phase[4] |
| Vintage (listed unit 158479) | — | 2000[6] |
| Vintage (listed unit 158478) | — | 2004[4] |
| Maximum Energy | — | 180 keV[5] |
| Current | — | 125 A[4] |
| Energy Rating | — | 180KeV[5] |
| Amperage | — | 125 A[4] |
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