Waferpedia

Comparison ledger

0041-39086 ESC PartversusPlasmalab 180 ICP

Applied Materials 0041-39086 ESC Part, Oxford Instruments Plasmalab 180 ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0041-39086 ESC PartApplied Materials
Plasmalab 180 ICPOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
Family—Oxford Instruments Plasmalab
Specifications
Configuration—For parts[1]
Process type—ICP (Inductively Coupled Plasma) high-density etching system configured for reactive ion etching[2]
System type—Load-locked plasma etching system with ICP source[2]
Operation—Fully automatic computer-controlled operation[2]
Maximum substrate size—150 mm[2]
Configured substrate size—100 mm wafers[2]
Wafer clamping—Mechanical clamping[2]
Backside cooling—Helium cooling[2]
Vacuum system—Alcatel turbo pump with controller and roughing pump[2]
Gas box—Six MFC gas controllers[2]
Previously used process gases—CHF3/CHF4, C3F8, C4F8, argon, oxygen, hydrogen, chlorine[2]
Electrical rating—208V, 3-phase, 50/60 Hz[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]semistarcorp.comsemistarcorp.com