Comparison ledger
Applied Materials 0010 47763, Lam Research 9400, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | 9400Lam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Lam Research 9400 |
| Specifications | ||
| Configuration | 2nd Source New[1] | — |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | TCP 9400[4] |
| OEM | Applied Materials[1] | Lam Research[4] |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Tool name | — | Lam Research TCP 9400 Poly Etcher[4] |
| Process category | — | Inductively Coupled Plasma Etching (ICP)[4] |
| Cleanliness group | — | Clean, Semiclean[4] |
| Use | — | for poly and Si etches[4] |
| Maximum etch depth | — | 3 um[4] |
| Process materials | — | Poly and Si[4] |
| Cleanliness | — | Clean, Semiclean[4] |
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