Comparison ledger
Applied Materials 0010-16392 ESC Assembly, SPTS RIE-10, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | RIE-10SPTS |
|---|---|---|
| OEM | Applied Materials | SPTS |
| Category | Etch | Etch |
| Wafer size | — | 6-inch wafers |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | SPTS RIE-10 |
| Specifications | ||
| OEM | Applied Materials[1] | — |
| Model | 0010-16392[1] | — |
| Type | ESC Assembly[1] | — |
| Wafer Size | 300 mm[2] | — |
| Electrode Configuration | Dual[2] | — |
| Etch rate | — | 6–10 µm/min[3] |
| Aspect ratio | — | 50:1[3] |
| Selectivity to resist | — | >50:1[3] |
| Selectivity to silicon oxide | — | >100:1[3] |
| Uniformity | — | <5% across 6-inch wafers[3] |
| Primary RF power | — | up to 3,000 W[3] |
| Secondary RF power | — | up to 3,000 W[3] |
| Substrate power | — | up to 300 W[3] |
| Chuck temperature range | — | -15°C to +40°C[3] |
| Sample size handling | — | 6-inch or smaller samples[3] |
| End point detector | — | Claritas End Point Detector[3] |
| Wafer size | — | 6-inch wafers[4] |
| Tool type | — | deep silicon etching system[3] |
| Plasma sources | — | dual plasma sources[3] |
| Gas inlets | — | dual gas inlets[3] |
| Fixed RF matching | — | yes[3] |
| Dual plasma sources | — | yes[3] |
| Dual gas inlets | — | yes[3] |
| Side wall roughness (scallop depth) | — | <6 nm for nanoscale features; range 6–700 nm[3] |
| Wafer handling | — | 6-inch or smaller samples[3] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →