Waferpedia

Comparison ledger

0010-13622 RF Match forversusFlexAL

Applied Materials 0010-13622 RF Match for, Oxford Instruments FlexAL, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-13622 RF Match forApplied Materials
FlexALOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-13622 RF Match forOxford Instruments FlexAL
Cited variants—
  • System 100 PECVD / FlexAL ALD (thermal/plasma) cluster system[1]
Specifications
ConfigurationHigh Efficiency HE RF Match-Bias[2]Compatible with TiN, TaN, TiO, TaO, SiN[3]
Model0010-13622[2]—
Product TypeRF Match for PVD (Physical Vapor Deposition)[2]—
FeatureHigh Efficiency HE RF Match-Bias[2]—
Gases—BTBAS, TBTDMT, TDMAT, CF4[3]
Deposition method—Atomic layer deposition (ALD), thermal and plasma-assisted[1]
Wafer size—up to 200 mm[4]
Substrate temperature range—up to 550 °C[4]
Chamber temperature—up to 150 °C[4]
Film types (commissioned)—Al2O3, TiO2, HfO2, SiO2[1]
Film types (high-quality nitride superconductors)—NbN, TiN[4]
Precursors (examples)—TMA, TIIP, TEMAH, BTBAS, TBTDMT, TDMAT[1]
Gases (from listing)—BTBAS, TBTDMT, TDMAT, CF4[3]
Ozone generator—yes[4]
Residual gas analyser—yes[4]
Optical emission spectrometer (integrated)—yes[4]
Glove box (inert atmosphere)—yes[4]
Source configuration—remote plasma and thermal[4]
Cluster capability—shared loadlock with PlasmaLab 100 PECVD[1]

Plan your fab

Building a Deposition process? Get a complete equipment list.

Open the fab equipment planner →
Sources (4)Every fact above is drawn from these public sources
  1. [1]uwaterloo.cauwaterloo.ca
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]epfl.chepfl.ch