Comparison ledger
Applied Materials 0010-03485 Magnet Assy, Hitachi 9300, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-03485 Magnet AssyApplied Materials | 9300Hitachi |
|---|---|---|
| OEM | Applied Materials | Hitachi |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-03485 Magnet Assy | Hitachi 9300 |
| Specifications | ||
| Configuration | WP AL 300mm PVD[1] | — |
| OEM | Applied Materials[1] | — |
| Model | 0010-03485[1] | 9300[6] |
| Description | MAGNET ASSY, WP AL 300MM PVD[2] | — |
| Process | PVD[3] | — |
| Wafer size | 300mm[4] | 200 mm or 300 mm[7] |
| Version | Spares[4] | — |
| Part Number | 0010-03485[1] | — |
| Manufacturer | Applied Materials[1] | Hitachi[5] |
| Process Type | PVD (Physical Vapor Deposition)[1] | — |
| Application (Material) | Aluminum (AL)[1] | — |
| Wafer Diameter (associated) | 300 mm[1] | — |
| Research status | — | Provisional entry; no specifications recorded yet[5] |
| Designation | — | Hitachi S-9300[5] |
| Tool type | — | High-resolution critical dimension scanning electron microscope (CD-SEM)[5] |
| Application | — | Semiconductor wafer metrology[5] |
| Electron source | — | Schottky emission source[7] |
| Accelerating voltage | — | 500V to 1600V, 10V steps[7] |
| Lens system | — | 3-stage electromagnetic lens system with boosting voltage[7] |
| Magnification | — | 1000X to greater than 300,000X[7] |
| Resolution | — | 3nm at 800V[7] |
| Communication interface | — | SECS/GEM[7] |
| Stage configuration | — | Dual XY stages[7] |
| Image processing | — | Hitachi microscale DSP image processing[7] |
| Imaging mode | — | Backscattered electron (BSE) mode functionality[7] |
| Static measurement accuracy | — | 3 sigma 5nm without auto-focus[7] |
| Loading reliability | — | 25 load operations without error on both ports A and B[7] |
| Throughput | — | 28 wafers per hour[7] |
| Auto-addressing accuracy | — | Within ±3.0 µm in both x and y directions[7] |
| Field of view | — | 1.2mm[7] |
| Probe current | — | 4~24pA[7] |
| Objective aperture | — | 4-opening, click-stop, heated aperture is selectable/adjustable outside the vacuum[7] |
| Scan coil | — | 2-stage electromagnetic deflection[7] |
| Field of view / wafer imaging ability | — | Entire surface of 12 inch wafer[7] |