Comparison ledger
Varian 0216 7696, E 11368072 ESC, Varian 350D, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 350DVarian | |
|---|---|---|
| OEM | Varian | Varian |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | 1986 |
| Production run | — | 1986– |
| Lifecycle | — | Discontinued |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Varian 0216 7696, E 11368072 ESC | Varian 350D |
| Specifications | ||
| Configuration | Platen ADV-S Type[1] | — |
| Type | ESC Platen ADV-S Type[1] | medium current implanter[3] |
| Category | Ion Implantation[2] | — |
| Relationship to 300 XP | — | industry-standard predecessor platform that the 300 XP evolved from[3] |
| Usage period | — | tool of choice during the early 1980s[3] |
| Wafer sizes | — | 4 inch and 6 inch[4] |
| Implant species | — | Boron (B11 or BF2) and Phosphorus (P31)[4] |
| Energy range | — | 10 keV to 200 keV[4] |
| Dose range | — | 1E12 to 5E15 ions/cm²[4] |
| End stations | — | Independent dual end stations[3] |
| Wafer handling | — | Vertical, edge-only wafer handling[3] |
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