Comparison ledger
Oxford Instruments 100 ICP Fluorine, Tokyo Electron Unity II E 855 DD, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | Unity II E 855 DDTokyo Electron |
|---|---|---|
| OEM | Oxford Instruments | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Tokyo Electron Unity II E 855 |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| Configuration | — | Need RFQ[2] |
| Wafer Size | — | 8 inch[2] |
| Process | — | Etch[3] |
| Equipment Type | — | Etcher[3] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →