Waferpedia

Comparison ledger

100 ICP FluorineversusWS 820 C Oxide

Oxford Instruments 100 ICP Fluorine, SCREEN WS 820 C Oxide, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
OEMOxford InstrumentsSCREEN
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineSCREEN WS 820 C Oxide
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]—
Wafer Size—8 inch (200mm)[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]Equipment inventory listing