Waferpedia

Comparison ledger

100 ICP FluorineversusIonfab 300 Plus IBD IBE

Oxford Instruments 100 ICP Fluorine, Oxford Instruments Ionfab 300 Plus IBD IBE, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
Ionfab 300 Plus IBD IBEOxford Instruments
OEMOxford InstrumentsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineOxford Instruments Ionfab 300
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]—
Phase—3 Phase[2]
Configuration—Loadlock and robot with secondary pumping, Vacuum can remain inside for higher throughput.[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]inventory listing