Comparison ledger
Nikon NSR 2205 i 14 E 2 i-Line, SUSS MicroTec BA8 Gen4 Pro, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | BA8 Gen4 ProSUSS MicroTec | |
|---|---|---|
| OEM | Nikon | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | Gen4 Pro |
| Family | Nikon NSR 2205 | SUSS MicroTec BA8 Gen4 Pro |
| Cited variants |
| — |
| Specifications | ||
| Configuration | Asahi N 4 A-C Chamber:[2] | — |
| Chamber | 21.1℃[2] | — |
| LLTC | 23℃[2] | — |
| MCSV Version | 3.46 C[2] | — |
| Resolution | 0.35μm or better[6] | — |
| N.A. | 0.63 Exposure light source: i line[6] | — |
| Reduction ratio | 1:5[6] | — |
| Exposure field size | 22mm square to 17.9 (H) x 25.2 (V)mm[6] | — |
| Alignment accuracy (EGA, |x|+3σ) | 40nm or better[6] | — |
| Alignment system | LSA(standard), FIA(standard), LIA(optional)[6] | — |
| Wafer size | Throughput ≧ 103 wafers/hour (200 mm wafer)[6] | up to 200 mm[9] |
| Magnification | 1/5 Reduction[6] | — |
| Light-Source | i-Line(365nm)[7] | — |
| Make | Nikon[2] | — |
| Model | NSR 2205 i 14 E 2[2] | — |
| Set Temperature | -[2] | — |
| Chamber Temperature | 21.1°C[2] | — |
| Computer Type | Alpha Station, HP Alpha Server DS 15 A, Smart Modular Technology ETM 25 SA, Nikon Nest[2] | — |
| Vintage | 2006 (unit 137809), 2001 (unit 137808), 2008 (unit 137807), 2001 (unit 137806), 2001 (unit 137805)[2] | — |
| Automation level | — | Semi-automated[9] |
| Processes | — | Mask alignment, Bond alignment, Exposure, UV bonding, Fusion bonding, Micro- and Nanoimprinting, Selective plasma activation[9] |
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