Comparison ledger
Lam Research AutoEtch 490 plasma etcher plasma etch semiconductor, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | 6" | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research AutoEtch 490 plasma etcher plasma etch semiconductor | Oxford Instruments 100 ICP Fluorine |
| Cited variants |
| — |
| Specifications | ||
| Category | Plasma Etch[1] | — |
| Original Equipment Manufacturer | Lam Research[1] | — |
| Condition | AS IS condition(One chiller, no pump, With ENI OEM 12 RF Generator)[1] | — |
| Wafer Size | 4,5,6 inch capability.[1] | — |
| Valid Time | Subject to prior sale[1] | — |
| Lead Time | Ready to go[1] | — |
| Warranty | No.[1] | — |
| Refund | No.[1] | — |
| Inspection | Against appointment[1] | — |
| Model | Lam AutoEtch 490 SN1644[1] | — |
| Wafer size | Lam AutoEtch 490 Wafer Belt Drive System[1] | 4 inch, 6 inch, 8 inch (with clamp change)[4] |
| RF generator | ENI OEM 12 RF Generator[1] | — |
| Chamber type | parallel plate[1] | — |
| Wafer handling | cassette to cassette, single wafer[1] | — |
| Number of gases | 5 independent, capacity for 6[1] | — |
| Coolant | Ethylene glycol or deionized water[1] | — |
| Control processor | Z80 microprocessor[2] | — |
| Polysilicon etch rate (Cl/He) | ≥3500 Å/min[3] | — |
| Polysilicon etch uniformity (3σ) | ±15%[3] | — |
| Polysilicon/profile control | 85-90 degrees[3] | — |
| Isotropic polysilicon etch rate (SF6/He) | 6000-12000 Å/min[3] | — |
| Nitride etch rate (SF6/He sloped) | ≥1800 Å/min[3] | — |
| Nitride etch rate (SF6/He anisotropic) | 1000-2000 Å/min[3] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[4] |
| Cryo DRIE etch rate | — | up to 5 µm/min[4] |
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