Comparison ledger
KLA .498 PSL Wafer, Nova 600i, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 600iNova | |
|---|---|---|
| OEM | KLA | Nova |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | KLA .498 PSL Wafer | Nova 600i |
| Specifications | ||
| Configuration | NIST Traceable[1] | — |
| NIST traceability | Yes[1] | — |
| Model | — | Nova 600i Dual Beam[2] |
| OEM | — | FEI[2] |
| Category | — | Focused Ion Beam (FIB)-SEM[2] |
| Beam configuration | — | Dual-beam system combining Ga FIB with FESEM (thermal field emitter)[2] |
| Gas injection | — | Multiple gas injector system for deposition of Pt and SiO₂[2] |
| Manipulator | — | PC-controlled nanometer-resolution manipulator[2] |
| Capability | — | TEM sample preparation capability[2] |
| Electron beam resolution @ optimum WD | — | 1.1 nm @ 15 kV; 2.5 nm @ 1 kV[3] |
| Electron beam resolution @ coincident point | — | 1.5 nm @ 15 kV; 2.0 nm @ 5 kV[3] |
| Ion beam resolution @ coincident point | — | 7.0 nm @ 30 kV (5.0 nm achievable)[3] |
| Electron beam accelerating voltage | — | 200 V to 30 kV[3] |
| Ion beam accelerating voltage | — | 500 V to 30 kV[3] |
| Electron beam probe current | — | ≤ 20 nA in 21 steps[3] |
| Ion beam probe current | — | 1.5 pA to 20 nA (15 position aperture strip)[3] |
| Stage travel (X,Y) | — | 150 mm, piezo-driven[3] |
| Maximum sample diameter | — | 150 mm[3] |
| Detectors | — | In-lens TLD (SE and BSE), Everhardt Thornley SED, IR camera[3] |
| Column angle | — | 52° between electron and ion columns[3] |
| Gas injection system | — | Up to 5 injectors; common chemistries include Pt, W, C, and enhanced etch[3] |
| Operating system | — | Windows XP SP2[3] |
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