Comparison ledger
Karl Suss MA6, SUSS MicroTec MA / BA Gen4 Pro Series, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | MA6Karl Suss | MA / BA Gen4 Pro SeriesSUSS MicroTec |
|---|---|---|
| OEM | Karl Suss | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | 150mm | 150mm |
| Process node | 1 micron and better; 0.6 µm under optimum conditions in vacuum mode | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | i-line | Gen4 |
| Family | Karl Suss MA6 | SUSS MicroTec MA / BA Gen4 Pro Series |
| Cited variants |
| |
| Specifications | ||
| Substrate range | 5 x 5 mm dies to wafers up to 150 mm[1] | — |
| Maximum substrate thickness | 6 mm[1] | — |
| Resolution | 0.6 µm under optimum conditions in vacuum mode[1] | — |
| Light source | Broadband Hg lamp[1] | — |
| Wavelength channels | Channel 1 (405 nm) and Channel 2 (365 nm)[1] | — |
| Wafer chucks available | 3, 4, 6 inch[1] | — |
| Mask holders available | 4, 5, 7 inch[1] | — |
| Top side alignment precision | 0.5 µm[1] | — |
| Objectives | 5X, 10X, and 20X[1] | — |
| Alignment features | Splitfield microscope with storage and automatic movement between reference points; Bottom-Side Alignment (BSA); Wedge Error Compensation (WEC)[1] | — |
| Exposure modes | proximity, soft contact, hard contact, and vacuum[1] | — |
| Alignment accuracy | 0.5 µm (motorized top side alignment)[1] | — |
| Microscope objectives | 5X, 10X, and 20X[1] | — |
| Wedge Error Compensation | Yes (ensures parallelism between substrate and photomask)[1] | — |
| Maximum substrate size | 150 mm (wafers) or 5x5 mm to 150 mm irregular substrates[1] | — |
| Resolution (vacuum mode) | 0.6 µm (optimum conditions)[1] | — |
| Bottom-Side Alignment | Available (BSA)[1] | — |
| Resolution (optimum vacuum mode) | 0.6 µm[1] | — |
| Resolution (typical) | 1 µm and better[5] | — |
| Exposure methods | flood, proximity, soft contact, hard contact, low vacuum, vacuum[5] | — |
| Mask sizes | 2.5x2.5, 4x4, 5x5, 8x8 inches[5] | — |
| Wafer size (top-side alignment) | up to 6 inches (2, 3, 4, 6 inch)[5] | — |
| Wafer size (bottom-side alignment) | 3 and 4 inch[5] | — |
| Wavelength range | UV broadband 250-450 nm; i-line 365 nm; g-line 436 nm[5] | — |
| Light source (UIC) | Broadband Hg lamp with Channel 1 (405 nm) and Channel 2 (365 nm)[1] | — |
| Alignment accuracy (motorized top-side) | 0.5 µm[1] | — |
| Type | — | Semi-automated system[4] |
| Wafer size | — | up to 150 mm / 200 mm[4] |
| Mask alignment | — | Yes[4] |
| Bond alignment | — | Yes[4] |
| Exposure | — | Yes[4] |
| UV bonding | — | Yes[4] |
| Fusion bonding | — | Yes[4] |
| Micro- and nanoimprinting | — | Yes[4] |
| Selective plasma activation | — | Yes[4] |
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