Waferpedia

Comparison ledger

HMR900versusNSR-1505G4

Hamatech HMR900, Nikon NSR-1505G4, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
HMR900Hamatech
OEMHamatechNikon
CategoryLithographyLithography
Wafer size4"4"
Process node—better than 750 nm resolution; better than 150 nm alignment
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation—g-line
FamilyHamatech HMR900Nikon NSR-1505G4
Specifications
Tool typeMask processor[1]—
Primary useCr-plate wet processing or cleaning[1]—
Installed mediaDeveloping exposed resist (AZ 351B developer), Cr wet etching (TechniEtch Cr N°1), and resist stripping (AZ 400K non-diluted)[1]—
Substrate sizeSquare plates up to 7" x 7"[1]—
Supported chuck sizes4" x 4", 5" x 5", 6" x 6", and 7" x 7" square plates[1]—
LoadingManual loading and unloading of substrates[1]—
RotationDirect and reverse rotation (CW, CCW)[1]—
Speed accuracy+/-1 rpm[1]—
Programmable recipes20 recipes with 50 steps each[1]—
Substrate fixationMechanical side edge substrate fixation; chucks for Cr plates do not use vacuum clamping[1]—
Substrate handlingManual loading and unloading[1]—
Chuck size4" x 4", 5" x 5", 6" x 6", 7" x 7" square plates[1]—
Recipe capacity20 recipes, 50 steps each[1]—
Chemical mediaAZ 351B developer, TechniEtch Cr N°1, AZ 400K non-diluted, with DI water rinse and drying[1]—
Equipment typeMask processor[1]—
Process typeCr-plate wet processing or cleaning[1]—
Chemical treatment 1Developing exposed resist with AZ 351B developer[1]—
Chemical treatment 2Cr wet etching with TechniEtch Cr N°1[1]—
Chemical treatment 3Resist stripping with AZ 400K non-diluted[1]—
Rinse and dryIntermediate DI water rinse steps and final drying[1]—
Supported mask and reticle types4, 5 and 7 inch masks for mask-aligner usage; 6 inch reticules for DUV stepper usage[1]—
Recipe capability20 recipes with 50 steps each can be programmed[1]—
Operationmanual loading and unloading of the substrates[1]—
Substrate formatsquare plates up to 7" x 7"[1]—
Supported plate sizes4" x 4", 5" x 5", 6" x 6", 7" x 7"[1]—
Chuck typemulti-size chuck for square plates[1]—
Acceleration / speed accuracysmooth acceleration and speed accuracy +/-1 rpm[1]—
Process stepsdeveloping exposed resist, Cr wet etching, resist stripping, intermediate DI water rinse steps, and final drying[1]—
Type—Wafer stepper[2]
Reduction—5x reduction[2]
Reticle size—5" reticle[2]
Wafer size—4" wafers[2]
Exposure source—g-line UV[2]
Resolution—better than 750 nm[2]
Alignment—better than 150 nm[2]
Reduction factor—5x[2]
Alignment accuracy—better than 150 nm[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]epfl.chepfl.ch
  2. [2]nanofab.ece.cmu.edunanofab.ece.cmu.edu