Waferpedia

Comparison ledger

510 Waferversus1 WBS 1 Wafer Substrate

EV Group 510 Wafer, Logitech 1 WBS 1 Wafer Substrate, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
510 WaferEV Group
OEMEV GroupLogitech
CategoryPackaging & BondingPackaging & Bonding
Wafer sizeManual wafer load substrate bonder—
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEV Group 510Logitech 1 WBS 1 Wafer Substrate
Specifications
ConfigurationRefurbished[1]—
Wafer sizeManual wafer load substrate bonder[1]—
Max Bond Force10 kN[1]—
Top side heater550°C max. in 1°C steps[1]—
Bottom side heater550°C max. in 1°C steps[1]—
Temperature uniformity± 1,5 % Turbo pump and controller[1]—
ManufacturerEV Group[1]—
Model510 Wafer[1]—
CategoryPackaging & Bonding[2]—
Wafer handlingManual wafer load substrate bonder[2]—
Bonding capabilityFusion and thermal compression bonding[1]—
Bond chamberHigh-vacuum capable bond chamber[2]—
Control softwareWindows based control software and operation interface[1]—
Turbo pump and controllerIncluded[1]—
Roughing pumpIncluded[1]—
System chillerIncluded[1]—
Load/unload toolIncluded[1]—
System computer, monitor, and keyboardIncluded[1]—
VacuumStandard: 0.1 mbar; optional: 1E-5 mbar[3]—
Max temperature550 °C[3]—
Loading chamberManual[3]—
Max contact force10, 20, 60 kN[3]—
Heater size150 mm, 200 mm[3]—
Single chips processingYes[3]—
Active water coolingFor bottom side[3]—
Power supply for anodic bondingMax voltage 2 kV; max current 50 mA[3]—
Wafer Size—6 inch[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]waferpedia.comwaferpedia.com
  3. [3]evgroup.comevgroup.com
  4. [4]Equipment inventory listing