Waferpedia

Comparison ledger

101versusMA/BA6

EV Group 101, SUSS MicroTec MA/BA6, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
101EV Group
MA/BA6SUSS MicroTec
OEMEV GroupSUSS MicroTec
CategoryLithographyLithography
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEV Group 101SUSS MicroTec MA/BA6
Cited variants—
  • MA/BA6 Gen4[1]
  • SUSS MicroTec MA/BA6 Gen4 Mask Aligner[2]
Specifications
OEMEV Group[3]—
Model101[3]—
Equipment nameEVG 101 Spray Coater[3]—
NEMO IDevgspraycoat[3]—
Training requiredEVG 101 Training[3]—
Training duration1.50 hours[3]—
Processing techniqueResist Spray Coat (manual)[3]—
Cleanliness"All"[3]—
LocationSNF Paul G Allen L107 Cleanroom[3]—
Wafer diameter (substrate size)up to 300 mm[4]—
Available modulesSpin coat / OmniSpray® / develop[4]—
Wafer handling optionsBowed / warped / thin wafer handling, edge handling[4]—
Dispense optionsVarious resist dispense pumps covering viscosities up to 52000 cP; constant pressure dispense systems; EBR / BSR / pre-wet / bowl wash / liquid priming[4]—
Processing technique (at SNF)Resist Spray Coat (manual)[5]—
Cleanliness group (at SNF)"All"[3]—
Type—Contact aligner[6]
Application—Broadband lithography[6]
Alignment capability—Backside alignment capability[6]
Exposure wavelengths—g-line (436 nm), h-line (405 nm), i-line (365 nm), UV broadband (350-450 nm)[1]
Illumination area—150 mm diameter[1]
Resolution (standard)—1 µm[1]
Resolution (best)—0.6 µm in vacuum contact mode[2]
Topside overlay accuracy—500 nm[1]
Backside overlay accuracy—1000 nm[1]
Maximum wafer diameter—150 mm (6 in)[1]
Substrate sizes—1" to 150 mm diameter[7]
Mask sizes—2.5" x 2.5" to 7" x 7"[7]
Maximum substrate thickness—10 mm[7]
Lamp—350 W mercury lamp[2]
Exposure modes—vacuum contact, hard contact, soft contact[2]
i-line band pass filter—removable[2]
Alignment accuracy—0.25 - 0.5 µm[2]
Backside alignment—Yes[6]
Tool type—Contact aligner[6]
Alignment modes—Frontside and backside alignment[1]
Resolution—1 µm[1]
Top side overlay accuracy—500 nm[1]
Mask sizes supported—127 mm x 127 mm (5 in.) and 178 mm x 178 mm (7 in.)[1]
Substrate thickness—10 mm maximum substrate thickness[7]
Feature size—Down to 0.6 µm[2]
Exposure area—6 in. diameter exposure area[2]
Light source—350 W mercury lamp[2]

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Sources (7)Every fact above is drawn from these public sources
  1. [1]nist.govnist.gov
  2. [2]imseam.uni-heidelberg.deimseam.uni-heidelberg.de
  3. [3]snfguide.stanford.edusnfguide.stanford.edu
  4. [4]evgroup.comevgroup.com
  5. [5]snfguide.stanford.edusnfguide.stanford.edu
  6. [6]cnsi.ucsb.educnsi.ucsb.edu
  7. [7]nff.gmu.edunff.gmu.edu