Comparison ledger
EV Group 101, GCA 200, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 101EV Group | 200GCA |
|---|---|---|
| OEM | EV Group | GCA |
| Category | Lithography | Lithography |
| Wafer size | — | up to 6-inch diameter wafers; substrate size approximately 10 x 10 mm up to 100 mm, with 150 mm possible |
| Process node | — | i-line |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | i-line |
| Family | EV Group 101 | GCA 200 |
| Specifications | ||
| OEM | EV Group[1] | — |
| Model | 101[1] | — |
| Equipment name | EVG 101 Spray Coater[1] | — |
| NEMO ID | evgspraycoat[1] | — |
| Training required | EVG 101 Training[1] | — |
| Training duration | 1.50 hours[1] | — |
| Processing technique | Resist Spray Coat (manual)[1] | — |
| Cleanliness | "All"[1] | — |
| Location | SNF Paul G Allen L107 Cleanroom[1] | — |
| Wafer diameter (substrate size) | up to 300 mm[2] | — |
| Available modules | Spin coat / OmniSpray® / develop[2] | — |
| Wafer handling options | Bowed / warped / thin wafer handling, edge handling[2] | — |
| Dispense options | Various resist dispense pumps covering viscosities up to 52000 cP; constant pressure dispense systems; EBR / BSR / pre-wet / bowl wash / liquid priming[2] | — |
| Processing technique (at SNF) | Resist Spray Coat (manual)[3] | — |
| Cleanliness group (at SNF) | "All"[1] | — |
| Manufacturer | — | GCA[4] |
| Tool type | — | Lithography[4] |
| Description | — | GCA 200 I-Line Wafer Stepper[4] |
| Exposure wavelength | — | i-line (365 nm)[4] |
| Exposure mode | — | Step and repeat[4] |
| Wafer loading | — | Manual wafer loading[4] |
| Supported piece parts | — | Down to smaller than 10 mm x 10 mm[4] |
| Supported wafer diameter | — | Up to 6 inches[4] |
| Maximum square die size | — | 14.8 mm x 14.8 mm[4] |
| Lens | — | Olympus 2145[4] |
| Numerical aperture | — | 0.45[4] |
| Mask reduction | — | 5x[4] |
| Ultimate resolution | — | Better than 0.5 um in the center of the lens field[4] |
| Resolution across field | — | 0.7 um isolated lines across the entire field[4] |
| Alignment tolerance | — | Better than 0.25 um global alignment; better than 0.15 um local alignment[4] |
| I-line intensity | — | About 420 mW/cm² at the wafer with a 1000 W Hg arc lamp[4] |
| Control | — | Computer controlled; recipes can be programmed and saved on hard disk[4] |
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