Comparison ledger
Dektak 6M, Oxford Instruments PRS900, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6MDektak | PRS900Oxford Instruments |
|---|---|---|
| OEM | Dektak | Oxford Instruments |
| Category | Wet Processing / Clean | Wet Processing / Clean |
| Wafer size | 6" | 6" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Dektak 6M | Oxford Instruments PRS900 |
| Specifications | ||
| Instrument type | Stylus profilometer[1] | — |
| Equipment type | Cleanroom Instrumentation; Metrology; Microscopy/Surface Analysis; Surface Analysis[1] | — |
| Measured feature | Film step height[1] | — |
| Measurement range | Steps from 260 microns down to 10 nm[1] | — |
| Additional uses | Surface topography profiling and surface roughness measurement in the nanometer range[1] | — |
| Stylus radius | 25-micron radius high aspect ratio stylus[1] | — |
| Maximum acceptable sample size | 6 inches[1] | — |
| Location | FNT 4.106[1] | — |
| Contact | Dr. Raluca Gearba[1] | — |
| Step height measurement range | 260 µm to 10 nm[1] | — |
| Maximum sample size | 6 inches[1] | — |
| Tool type | — | plasma stripper; barrel reactor[2] |
| Process | — | dedicated to dry resist stripping[2] |
| Etching character | — | purely chemical and isotropic[2] |
| Plasma source | — | oxygen plasma (RF capacitive or micro-wave)[2] |
| Automation | — | completely computer driven[2] |
| Carrier | — | quartz samples carrier[2] |
| Carrier wafer size | — | 4 or 6 inches[2] |
| Batch capacity | — | up to 25 wafers[2] |
| Resistance etch rate used at CMi | — | 0.035 um/min[2] |
| Type | — | Barrel reactor[2] |
| Chamber configuration | — | Barrel acts as Faraday cage, RF waves do not enter chamber; plasma UV radiations not filtered[2] |
| Maximum wafers per batch | — | 25[2] |
| Wafer carrier | — | Quartz samples carrier (4 or 6 inches)[2] |
| Mean resist etch rate | — | 0.035 µm/min for PR (for 5, 30, or 60 min recipes)[2] |
| Computer control | — | Completely computer driven[2] |
| Etch type | — | Purely chemical, isotropic[2] |
| Wafer carrier sizes | — | 4 or 6 inches[2] |
| Mean PR etch rate | — | 0.035 µm/min[2] |
| Standard process recipes | — | PR Ox5 (5 min), PR Ox30 (30 min), PR Ox60 (60 min)[2] |
| Reactor type | — | Barrel reactor[2] |
| Process type | — | Dry resist stripping; etching processes are purely chemical and isotropic[2] |
| Reactor shielding | — | The barrel acts as a Faraday cage so RF waves do not enter the treatment chamber[2] |
| UV behavior | — | Plasma UV radiations are not filtered and thermally activate the oxidation[2] |
| Control | — | Completely computer driven; the only manual handling is the loading/unloading step of the quartz samples carrier[2] |
| Recipe PR Ox5 (5 min) | — | Mean etch rate 0.035 µm/min; stripping of PR residuals after photolithography[2] |
| Recipe PR Ox30 (30 min) | — | Mean etch rate 0.035 µm/min; stripping of ~1 µm of PR[2] |
| Recipe PR Ox60 (60 min) | — | Mean etch rate 0.035 µm/min; stripping of ~2 µm of PR[2] |
| Forbidden materials | — | Cu, Ag, Au, Cr — equipment must remain microelectronic compatible[2] |
| Primary use | — | dry resist stripping[2] |
| Carrier type | — | quartz samples carrier[2] |
| Carrier capacity | — | up to 25 wafers[2] |
Plan your fab
Building a Wet Processing / Clean process? Get a complete equipment list.
Open the fab equipment planner →