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Comparison ledger

GSD 200 E 2 Ionversus0216 7696, E 11368072 ESC

Axcelis GSD 200 E 2 Ion, Varian 0216 7696, E 11368072 ESC, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMAxcelisVarian
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAxcelis GSD 200Varian 0216 7696, E 11368072 ESC
Specifications
High CurrentGSD-200EE[1]—
ConfigurationSoftware Version 6.12.3[1]Platen ADV-S Type[3]
Ion Source TypeELS[1]—
Source Material TypeMoly[1]—
Single Stage Extraction90keV[1]—
Beamline VersionStandard[1]—
Source Turbo Pump (P1)STP H2000C[1]—
Beam Line Cryo Pump (P3)CTI Onboard 10[1]—
End Station Cryo Pump (P2)CTI Onboard 8[1]—
ManufacturerAxcelis[1]—
ModelGSD 200 E 2[1]—
CategoryIon Implantation[2]Ion Implantation[4]
Wafer size6 inch[1]—
Software version6.12.3[1]—
GEM/SECS interfacePresent[1]—
Cassette capability4-cassette capability[1]—
Automated beam tuning and set-upw/Eaton Autotune[1]—
Energy range90KeV[1]—
Beamline and source pumpsBeamline and Source Pumps[2]—
Gas TypeMFC Type and Model[1]—
ArUNIT 1662 10SCCM - SDS[1]—
BF3UNIT 1662 10SCCM - SDS[1]—
AsH3UNIT 1662 10SCCM - SDS[1]—
PH3UNIT 1660 10SCCM - SDS[1]—
External Facilities ConnectionsAr N2[1]—
Cryo CompressorsCTI 9600 (1)[1]—
Remote Disk ChillerSMC-HRS050[1]—
Type—ESC Platen ADV-S Type[3]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]waferpedia.comwaferpedia.com
  3. [3]inventory listing
  4. [4]waferpedia.comwaferpedia.com