Comparison ledger
Axcelis 200 PCU, Sumitomo NV GSD HE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 PCUAxcelis | NV GSD HESumitomo |
|---|---|---|
| OEM | Axcelis | Sumitomo |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | 2000 Vintage | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Sumitomo NV GSD HE |
| Cited variants | — | |
| Specifications | ||
| P/N | SC 4840 A[3] | — |
| Frequency | 50 Hz[3] | — |
| Phase | 3 Phase[3] | — |
| Voltage | 400 V[3] | — |
| Configuration | — | Disk Type:[4] |
| Wafer Titlt Function | — | α + β ≤ ±11° adjustable[4] |
| Manufacturer | — | Sumitomo[4] |
| Model | — | NV GSD HE[4] |
| Category | — | Ion Implantation[5] |
| Wafer size | — | 6 inch[4] |
| Wafer handling | — | 17 wafers[5] |
| Wafer tilt function | — | α + β ≤ ±11° adjustable[4] |
| Disk type | — | Full Disk; AL Solid Disk; 150 mm[4] |
| Available gas types | — | Ar (external supply); BF3 (SDS3 4X); Xe (3.4 L)[4] |
| Maximum injection energy | — | 3,000 keV (varies depending on ion species)[4] |
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