Comparison ledger
Axcelis 17099370 Outer strike plate, Axcelis GSD 200 E 2, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 17099370 Outer strike plateAxcelis | GSD 200 E 2Axcelis |
|---|---|---|
| OEM | Axcelis | Axcelis |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis 17099370 Outer strike plate | Axcelis GSD 200 E 2 |
| Specifications | ||
| Configuration | Used with Axcelis GSD 200[1] | — |
| Voltage | — | 208 V[2] |
| Frequency | — | 50 Hz[2] |
| Phase | — | 3 Phase[2] |
| Type | — | High Current ion implanter[3] |
| Energy | — | 180 KeV[3] |
| Wafer Size | — | 8 inch (200 mm)[3] |
| Power Requirements | — | 208 V, 125 A, 50 Hz, 3 Phase[2] |
| Vintage (listed unit 158479) | — | 2000[4] |
| Vintage (listed unit 158478) | — | 2004[2] |
| Maximum Energy | — | 180 keV[3] |
| Current | — | 125 A[2] |
| Energy Rating | — | 180KeV[3] |
| Amperage | — | 125 A[2] |
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