Comparison ledger
ASML NXE 3400 B EUV, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NXE 3400 B EUVASML | 1505 G 6 ENikon |
|---|---|---|
| OEM | ASML | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML NXE 3400 B EUV | Nikon 1505 |
| Specifications | ||
| Wafer size | 300 mm (12 inch)[1] | — |
| Node support | 7 nm, 5 nm[2] | — |
| Numerical aperture (NA) | 0.33[2] | — |
| Throughput (wafers per hour) | ≥ 125 (at 20 mJ/cm², die size 26×33 mm, 96 shots)[2] | — |
| Exposure field size | 26 × 33 mm[2] | — |
| Dedicated chuck overlay | 1.4 nm[2] | — |
| Matched-machine overlay | 2 nm[2] | — |
| Sigma range | 0.06 – 1.0[2] | — |
| Reduction factor | 4x[2] | — |
| Level sensor type | UV light based (same as NXE:3350B)[2] | — |
| Configuration | — | 5" reticle[3] |
| Resolution | — | 650 nm[4] |
| Numerical Aperture | — | 0.54[4] |
| Reduction | — | 5x[4] |
| Exposure Field | — | 15 x 15 mm[4] |
| Alignment Accuracy | — | 130 nm[4] |
| Wafer Size | — | 4 inch[3] |
| Light Source | — | g-line[5] |
| Introduction Year | — | 1988[4] |
| NA (Numerical Aperture) | — | 0.54[4] |
| Make | — | Nikon[3] |
| Model | — | 1505 G 6 E[3] |
| Category | — | Stepper[3] |
| Wafer Sizes | — | 4 inch[3] |
| Exposure type | — | g-line[4] |
| NA | — | 0.54[4] |
| Exposure field | — | 9.3 x 18.8 mm[4] |
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