Comparison ledger
Applied Materials P 5000 Cluster, Plasma-Therm 770, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | P 5000 ClusterApplied Materials | 770Plasma-Therm |
|---|---|---|
| OEM | Applied Materials | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials P 5000 Cluster | Plasma-Therm 770 |
| Specifications | ||
| Chamber A | Metal etch, not usable (needs new chamber)[1] | — |
| Chamber B | Dielectric etch, fully functional[1] | — |
| Chamber C | Polysilicon etch, not functioning, gas flow issues, new helium seals required[1] | — |
| Chamber D | Not used, status unknown[1] | — |
| Configuration | With:[1] | — |
| Wafer size | 4-inch/100mm wafer kit[1] | — |
| Chamber Type | Cluster tool with four chambers[2] | — |
| Etch Type (Chambers A, B, C) | Magnetically-Enhanced Reactive Ion Etch (MERIE)[2] | — |
| Endpoint Detection | Optical endpoint detection[2] | — |
| Chamber A Function | Metal etch[1] | — |
| Chamber B Function | Dielectric etch[1] | — |
| Chamber C Function | Polysilicon etch[1] | — |
| Manufacturer | — | Plasmatherm (Unaxis)[3] |
| Model | — | Plasma-Therm 770 SLR series[3] |
| Tool type | — | Dry Etch[3] |
| System type | — | Fluorine-based ICP etcher with loadlock[3] |
| Plasma source | — | Inductively Coupled Plasma (ICP) coil[3] |
| Substrate bias | — | Capacitively coupled substrate RF supply[3] |
| ICP coil power | — | 1000 W at 2 MHz[3] |
| Substrate bias power | — | 500 W at 13.56 MHz[3] |
| Available gases | — | C4F8, SF6, O2, Ar, N2, CHF3, CF4[3] |
| Backside cooling | — | Helium backside cooling[3] |
| Chuck temperature | — | 10°C standard[3] |
| Wafer handling | — | Single 100 mm / 4-inch wafer handling with physical topside clamp contacting the outer 5 mm of the wafer[3] |
| Control system | — | Windows-based computer control of process and wafer handling[3] |
| Endpoint monitoring | — | In-situ laser monitor with camera and simulation software[3] |
| Number of MFC gas controllers | — | 8[4] |
| Gases (chlorine configuration) | — | N₂, O₂, CHF₃, AR, CH₄, CL₂, BCL₃, CF₄[4] |
| Wafer size range (with appropriate kit) | — | 2" to 8"[4] |
| Gases (previous usage, chlorine configuration) | — | N₂, O₂, He, CHF₃, Cl₂, BCl₃[5] |
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