Waferpedia

Comparison ledger

eMax CT Plus Dielectricversus100 ICP Fluorine

Applied Materials eMax CT Plus Dielectric, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
eMax CT Plus DielectricApplied Materials
100 ICP FluorineOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials eMaxOxford Instruments 100 ICP Fluorine
Specifications
ConfigurationAlcatel ATH 1600 M Turbo Pump[1]—
Bias13.5 MHz (Bias) & 2 MHz (LF Bias)[1]—
LF BiasDaihen RMN-50N1[1]—
SourceDaihen AMN-30 H 60 MHz[1]—
Gate ValveNor-Cal / NC-95-PP[1]—
FIBeFib, wFib[1]—
Turbo PumpAlcatel ATH 1600 M[1]—
RF Match BoxIncluded[1]—
RF GeneratorIncluded[1]—
Chamber Equip CartIncluded[1]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[2]
Cryo DRIE etch rate—up to 5 µm/min[2]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[2]

Plan your fab

Building a Etch process? Get a complete equipment list.

Open the fab equipment planner →
Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]nanofab.utah.edunanofab.utah.edu