Comparison ledger
Applied Materials Centura DPS Poly, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura DPS PolyApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura DPS Poly | Oxford Instruments 100 ICP Fluorine |
| Cited variants |
| — |
| Specifications | ||
| Wafer Size | 6 inch[2] | — |
| Tool Type | Poly Etcher[2] | — |
| Plasma Source Type | Decoupled Plasma Source (DPS)[1] | — |
| RF Pulsing Frequency | 1 kHz to 5 kHz[1] | — |
| Chamber Coating Material | Alumina or Y2O3[1] | — |
| Supported Process Node | 28 nm[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[3] |
| Cryo DRIE etch rate | — | up to 5 µm/min[3] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[3] |
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